Zirconia CMP Slurry
Nano zirconia-based CMP (Chemical Mechanical Planarization) slurry engineered for semiconductor wafer polishing. Sub-80 nm particle size with adjustable pH provides controlled material removal for STI, oxide CMP, and advanced node planarization.
Especificaciones Técnicas
| abrasive | Nano ZrO₂ |
| ph range | pH 3 – 10 (adjustable) |
| filtration | 0.2 μm filtered |
| shelf life | ≥ 6 months |
| selectivity | Customizable SiO₂:Si₃N₄ selectivity |
| removal rate | Tunable by formulation (100 – 500 nm/min on SiO₂) |
| particle size | d50 < 80 nm |
| solid content | 5 – 30 wt% (adjustable) |
Aplicaciones
- STI (Shallow Trench Isolation) polishing
- Oxide layer removal and planarization
- Advanced node (≤ 7 nm) CMP processes
- ILD (Inter-Layer Dielectric) polishing
- Optical glass and sapphire finishing
Características Principales
- Sub-80 nm particle size for defect-free planarization
- Wide pH adjustability (3–10) for diverse process requirements
- Excellent dispersion stability with ≥ 6 months shelf life
- Low scratch and defect count on polished surfaces
- Customizable solid content and selectivity for process integration
