CMP Slurry for Metal
CAS Number: 1344-28-1
CMP slurry for metal is a chemically active abrasive suspension designed for polishing copper, tungsten, or other metal interconnect layers during semiconductor fabrication. It uses complexing agents and oxidizers in combination with abrasive particles to achieve controlled metal removal and planarization. Critical for damascene copper interconnect formation in advanced logic nodes and tungsten plug CMP in memory devices.
Technical Specifications
| pH | 2–4 (copper) or 2–4 (tungsten) |
| abrasive | Alumina or silica, 50–200 nm |
| appearance | White to grey suspension |
| removalRate | 2000–6000 Å/min (Cu) |
| selectivity | Cu:barrier > 50:1 (copper grade) |
| particleSize | D99 < 1 µm (scratch-free grade) |
Applications
- Copper damascene interconnect CMP
- Tungsten plug and contact CMP
- Cobalt liner and barrier CMP
- Advanced node back-end-of-line (BEOL) CMP
- 3D IC through-silicon via (TSV) CMP
Key Features
- High metal removal rate with low dishing and erosion
- High selectivity to dielectric and barrier layers
- Ultra-low large particle count to prevent scratching
- Stable chemical activity over extended bath life