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Spin-On Glass (SOG)

CAS Number: 7631-86-9

Spin-on glass (SOG) is a silica-based solution deposited by spin coating on semiconductor wafers and cured to form a planarizing silicon oxide film for gap-fill and interlayer dielectric (ILD) applications. It provides excellent gap-fill capability for sub-micron features without the need for high-vacuum deposition equipment. Available in silicate, siloxane, and hydrogen silsesquioxane (HSQ) chemistries.

Technical Specifications

viscosity3–50 cP
appearanceClear, colorless solution
cureCondition350–425°C / 30–60 min in N₂
solidsContent5–25 wt%
refractiveIndex1.40–1.46 (cured film)
dielectricConstant3.0–4.0 (cured)

Applications

  • Sub-micron gap-fill dielectric
  • Interlayer dielectric planarization
  • Shallow trench isolation gap-fill
  • Anti-reflective coating (ARC) underlayer
  • Passivation layer in thin-film transistors

Key Features

  • Excellent sub-micron gap-fill without void formation
  • Spin-coat process eliminates need for CVD equipment
  • Tunable refractive index and dielectric constant
  • Compatible with standard CMOS cleaning and etching

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Spin-On Glass (SOG) chemical structure

CAS Number

7631-86-9

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