Low-k Dielectric Additive
CAS Number: 17689-77-9
Low-k dielectric additive is a pore-generating or matrix-modifying chemical incorporated into dielectric thin films to reduce the dielectric constant (k) below 3.0 for advanced semiconductor interconnect layers. Reducing k lowers RC delay and cross-talk in dense IC metallization. Porogen-based additives introduce controlled nanopores into CVD or spin-on dielectric matrices to achieve ultra-low-k (ULK) values.
Technical Specifications
| poreSize | 2–5 nm average |
| porosity | 10–40% (ULK grade) |
| appearance | Clear liquid or solid precursor |
| thermalStability | >400°C |
| dielectricConstant | 2.0–3.0 (target film k value) |
| mechanicalStrength | Young's modulus >5 GPa |
Applications
- CVD low-k dielectric film deposition
- Spin-on low-k dielectric coating
- BEOL inter-metal dielectric in advanced nodes
- Porous ultra-low-k (ULK) film formation
- 3D IC dielectric layer modification
Key Features
- Lowers dielectric constant to reduce RC delay
- Controlled porosity via porogen loading
- Maintains mechanical integrity for CMP compatibility
- Compatible with both CVD and spin-on deposition