Hafnium ALD Precursor
CAS Number: 69038-57-9
Hafnium ALD precursor is a volatile organometallic compound used in atomic layer deposition (ALD) to grow ultra-thin hafnium oxide (HfO₂) high-k dielectric films for advanced gate dielectrics and DRAM capacitors. Common precursors include TEMAH and HfCl₄, which react with water or ozone oxidants to deposit conformal, pinhole-free HfO₂ at low temperatures. Essential for sub-10 nm CMOS logic and high-density memory fabrication.
Technical Specifications
| purity | >99.99% (4N) |
| appearance | Colorless to pale yellow liquid |
| growthRate | 0.8–1.1 Å/cycle |
| boilingPoint | 75–90°C at 0.1 Torr (TEMAH) |
| vaporPressure | 0.1–0.5 Torr at 50°C |
| metalImpurities | <1 ppm each (ICP-MS) |
Applications
- High-k gate dielectric for FinFET and GAA transistors
- DRAM capacitor dielectric (HfO₂)
- ReRAM and FeFET ferroelectric HfO₂ films
- Diffusion barrier layer deposition
- Optical coating high-k layers
Key Features
- Enables sub-nm thickness control via ALD self-limiting reactions
- Conformal deposition on high aspect ratio 3D structures
- Ultra-high purity to prevent device threshold voltage shift
- Compatible with H₂O and O₃ oxidant chemistries