semiconductor etching chemicals

Tungsten Hexafluoride CVD Precursor (WF6)

CAS: 7783-82-6

Tungsten hexafluoride (WF6) is the standard CVD precursor for depositing tungsten metal films used as contact plugs, local interconnects, and wordlines in DRAM and NAND flash memory. Reacted with SiH4 (nucleation layer) followed by H2 reduction, WF6 deposits highly pure, low-resistivity tungsten metal that fills sub-100nm contact holes with excellent void-free coverage.

semiconductor etching chemicals

Wafer Cleaning SC-2 Reagent (HCl/H2O2/H2O)

RCA SC-2 (Standard Clean 2, HPM: Hydrochloric acid-Peroxide Mixture) uses HCl:H2O2:H2O (1:1:6 v/v) at 65–80°C to remove alkali metals (Na, K) and heavy metal contamination (Au, Cu, Fe) from silicon wafer surfaces through metal-chloride complex formation. SC-2 is the second step in the standard RCA clean sequence, performed after SC-1 to achieve sub-ppb metal levels essential for high-integrity gate oxides.