Wafer Cleaning SC-2 Reagent (HCl/H2O2/H2O)
RCA SC-2 (Standard Clean 2, HPM: Hydrochloric acid-Peroxide Mixture) uses HCl:H2O2:H2O (1:1:6 v/v) at 65–80°C to remove alkali metals (Na, K) and heavy metal contamination (Au, Cu, Fe) from silicon wafer surfaces through metal-chloride complex formation. SC-2 is the second step in the standard RCA clean sequence, performed after SC-1 to achieve sub-ppb metal levels essential for high-integrity gate oxides.
Technical Specifications
| appearance | Colorless clear liquid (each component) |
| purity (%) | ≥99.9 (each component, SEMI grade) |
| use temperature | 65–80°C |
| HCl:H2O2:H2O ratio | 1:1:6 (standard, adjustable) |
| metallic impurities (per component) | ≤1 ppb each |
Applications
- RCA SC-2 heavy metal and alkali ion decontamination
- Pre-gate oxidation wafer clean (second step)
- Gold and copper contamination removal
- Pre-diffusion furnace wafer metal clean
- Post-CMP metal residue removal clean
Key Features
- Definitive removal of Au, Cu, and alkali metals through chloro-complex formation
- Complements SC-1 clean for comprehensive RCA two-step particle and metal removal
- Components available individually or as matched ultra-pure kit
- Compatible with 200mm and 300mm batch wet bench and single-wafer cleaning tools
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