Aluminum Chloride ALD Precursor (AlCl3)
CAS Number: 7446-70-0
Anhydrous aluminum chloride (AlCl3) is used as an ALD (atomic layer deposition) precursor for depositing Al2O3 high-k dielectric and aluminum-containing thin films in semiconductor devices. In ALD processes, alternating exposures of AlCl3 and water (or ozone) produce conformal Al2O3 films with monolayer-level thickness control, critical for gate dielectrics, capacitor dielectrics, and encapsulation layers.
Technical Specifications
| appearance | White to pale yellow crystalline powder |
| purity (%) | ≥99.999 (5N, anhydrous) |
| water content | ≤10 ppm |
| sublimation point | 178°C (at 1 atm) |
| metallic impurities (Fe, Si, Na) | ≤0.5 ppm each |
Applications
- Al2O3 high-k gate dielectric ALD
- DRAM capacitor Al2O3 dielectric deposition
- Encapsulation layer for OLED and flexible electronics
- Al2O3 etch stop and barrier layer
- Catalytic surface preparation for selective ALD
Key Features
- 5N ultra-high purity for defect-free high-k dielectric ALD films
- High vapor pressure simplifies delivery at moderate temperatures (100–150°C)
- Produces dense Al2O3 with low interface state density
- Packaged under inert atmosphere in ampoules for contamination-free delivery
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CAS Number
7446-70-0
Category
Semiconductor Etching ChemicalsAvailability
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