Argon Sputtering Gas (Ar Ultra-Pure)
CAS Number: 7440-37-1
Ultra-pure argon (Ar) is the primary sputtering and carrier gas in physical vapor deposition (PVD), ion beam etching, and plasma etch processes for semiconductor manufacturing. Argon ions are accelerated to bombard metal and dielectric targets for thin film deposition (Al, Cu, Ti, TiN, TaN) or to perform Ar ion milling for pattern definition in III-V and magnetic device fabrication.
Technical Specifications
| oxygen | ≤0.1 ppm |
| moisture | ≤0.1 ppm |
| nitrogen | ≤0.5 ppm |
| appearance | Colorless odorless inert gas |
| purity (%) | ≥99.9999 (6N semiconductor grade) |
Applications
- PVD (sputtering) of Al, Cu, Ti, TiN, TaN metal films
- Argon ion milling for pattern etching
- Plasma etch carrier and dilution gas
- CVD and ALD inert carrier/purge gas
- Ion implantation beam gas
Key Features
- 6N purity prevents target and film contamination in PVD sputtering
- Chemically inert — no reaction with target materials or deposited films
- Consistent plasma ignition and stability across a wide pressure range
- Available in high-pressure cylinders, bundles, and bulk liquid supply
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CAS Number
7440-37-1
Category
Semiconductor Etching ChemicalsAvailability
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