Carbon Tetrafluoride Plasma Etch Gas (CF4)
CAS Number: 75-73-0
Carbon tetrafluoride (CF4) is a versatile plasma etch gas used for etching silicon oxide, silicon nitride, and silicon in dry etch processes. When combined with oxygen, it etches SiO2 with high selectivity; alone or with H2, it is used for anisotropic silicon and nitride etch. CF4 also serves as a chamber cleaning gas and is used in remote plasma cleans for CVD reactors.
Technical Specifications
| oxygen | ≤2 ppm |
| moisture | ≤1 ppm |
| nitrogen | ≤5 ppm |
| appearance | Colorless odorless gas |
| purity (%) | ≥99.999 (5N semiconductor grade) |
Applications
- SiO2 and Si3N4 plasma etch (with O2 or H2)
- Silicon plasma etch and surface clean
- CVD chamber remote plasma clean
- Contact and via oxide etch in CMOS
- Compound semiconductor (GaAs, InP) dry etch
Key Features
- Versatile etch chemistry compatible with oxide, nitride, and silicon processes
- Tunable selectivity via addition of O2 (more oxide-selective) or H2 (more nitride-selective)
- Lower GWP than SF6 for certain low-etch-rate applications
- Non-flammable and non-toxic; easier to handle than fluorine-based etchants
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CAS Number
75-73-0
Category
Semiconductor Etching ChemicalsAvailability
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