Sulfur Hexafluoride Silicon Plasma Etch (SF6)
CAS Number: 2551-62-4
Sulfur hexafluoride (SF6) is a high-fluorine-content gas widely used as the primary etchant in silicon plasma etching processes, including MEMS deep reactive ion etching (DRIE), silicon trench etch, and polysilicon gate patterning. In the Bosch DRIE process, SF6 alternates with C4F8 passivation cycles to achieve ultra-deep, high-aspect-ratio silicon trenches with vertical sidewalls.
Technical Specifications
| oxygen | ≤1 ppm |
| moisture | ≤1 ppm |
| appearance | Colorless odorless gas |
| purity (%) | ≥99.999 (5N semiconductor grade) |
| CF4 and other fluorocarbons | ≤5 ppm |
Applications
- Bosch DRIE deep silicon trench etching (MEMS)
- Silicon isotropic plasma etch for release structures
- Polysilicon gate and hard mask etch
- TSV (through-silicon via) etch
- Silicon wafer dicing by plasma singulation
Key Features
- High fluorine atom yield in plasma for fast silicon etch rates (>10 µm/min DRIE)
- Excellent selectivity over SiO2 and photoresist masks in low-pressure etches
- Critical enabler for Bosch process achieving >50:1 aspect-ratio MEMS structures
- Available in high-pressure liquefied cylinders for high-volume DRIE tools
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CAS Number
2551-62-4
Category
Semiconductor Etching ChemicalsAvailability
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