Nitrogen Trifluoride Chamber Clean Gas (NF3)
CAS Number: 7783-54-2
Nitrogen trifluoride (NF3) is the preferred remote plasma chamber cleaning gas for CVD and ALD reactors, replacing C2F6 and CF4 due to its superior global warming potential (GWP) profile and higher utilization efficiency. NF3 plasma generates reactive F radicals that efficiently remove silicon-based deposits (SiO2, Si3N4, a-Si) from CVD chamber walls without requiring wafer exposure, dramatically reducing chamber downtime.
Technical Specifications
| oxygen | ≤1 ppm |
| moisture | ≤1 ppm |
| appearance | Colorless gas |
| purity (%) | ≥99.999 (5N semiconductor grade) |
| CF4 and other fluorocarbons | ≤5 ppm |
Applications
- Remote plasma clean of PECVD SiO2 and Si3N4 chambers
- CVD tungsten reactor cleaning
- ALD chamber fluorine clean between runs
- Silicon epitaxy reactor in-situ clean
- Thermal CVD oxide furnace tube clean
Key Features
- Near-100% utilization efficiency in remote plasma clean vs <20% for C2F6
- GWP of 17,200 (100yr) but effective utilization means lower absolute emissions
- Fast clean cycle reduces chamber downtime and improves tool throughput
- No fluorocarbon residues left in chamber after clean cycle
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CAS Number
7783-54-2
Category
Semiconductor Etching ChemicalsAvailability
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