Tungsten Hexafluoride CVD Precursor (WF6)
CAS Number: 7783-82-6
Tungsten hexafluoride (WF6) is the standard CVD precursor for depositing tungsten metal films used as contact plugs, local interconnects, and wordlines in DRAM and NAND flash memory. Reacted with SiH4 (nucleation layer) followed by H2 reduction, WF6 deposits highly pure, low-resistivity tungsten metal that fills sub-100nm contact holes with excellent void-free coverage.
Technical Specifications
| moisture | ≤1 ppm |
| appearance | Colorless gas (liquefied under pressure) |
| purity (%) | ≥99.999 (5N semiconductor grade) |
| cylinder pressure | Liquefied, 40 bar at 20°C |
| metallic impurities (Mo, Re, Os) | ≤0.1 ppm each |
Applications
- W contact plug fill in CMOS logic and memory
- DRAM wordline and local interconnect deposition
- 3D NAND wordline tungsten fill
- W gate electrode in replacement metal gate (RMG)
- Tungsten silicide (WSi2) gate deposition
Key Features
- 5N purity delivers low-resistivity W films (8–12 µΩ·cm) for low-RC contacts
- Excellent void-free fill in high-aspect-ratio (>10:1) contact holes
- Well-characterized process with broad fab equipment qualification base
- Supplied in specially passivated cylinders with nickel-plated valves
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CAS Number
7783-82-6
Category
Semiconductor Etching ChemicalsAvailability
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