Dichlorosilane CVD Precursor (DCS, SiH2Cl2)
CAS Number: 4109-96-0
Dichlorosilane (DCS, SiH2Cl2) is a widely used CVD precursor for depositing high-quality silicon nitride (Si3N4), silicon oxynitride (SiON), and polysilicon films in LPCVD processes. The DCS/NH3 chemistry at 750–800°C produces stoichiometric Si3N4 films with excellent uniformity and electrical properties for gate spacers, etch stops, and charge-storage layers in DRAM and flash memory.
Technical Specifications
| oxygen | ≤0.5 ppm |
| moisture | ≤0.5 ppm |
| appearance | Colorless flammable gas |
| purity (%) | ≥99.999 (5N semiconductor grade) |
| metallic impurities | ≤0.1 ppb each |
Applications
- LPCVD Si3N4 gate spacer and etch stop
- DRAM capacitor charge storage nitride
- SiON gate dielectric (nitrided oxide)
- Flash memory inter-poly ONO dielectric
- PECVD silicon nitride passivation layer
Key Features
- Preferred precursor for stoichiometric LPCVD Si3N4 with low hydrogen content
- Low deposition temperature versus trichlorosilane reduces thermal budget
- Excellent within-wafer and wafer-to-wafer uniformity in batch LPCVD furnaces
- Available in high-pressure cylinders with ultra-high-purity valves and fittings
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CAS Number
4109-96-0
Category
Semiconductor Etching ChemicalsAvailability
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