Silane (Monosilane) CVD Precursor (SiH4)
CAS Number: 7803-62-5
Monosilane (SiH4) is the fundamental silicon CVD precursor used for depositing polysilicon gates, epitaxial silicon, PECVD silicon nitride (with NH3), PECVD silicon oxide (with N2O/O2), and amorphous silicon thin films. It is also the nucleation precursor for tungsten CVD (WF6/SiH4) and silicon-based dielectric deposition processes across the semiconductor industry.
Technical Specifications
| oxygen | ≤0.1 ppm |
| moisture | ≤0.1 ppm |
| appearance | Colorless flammable gas |
| purity (%) | ≥99.9999 (6N semiconductor grade) |
| metallic impurities | ≤0.01 ppb each |
Applications
- Polysilicon gate and resistor CVD deposition
- PECVD SiN and SiO2 passivation and ILD
- Epitaxial silicon layer growth (SiH4/H2)
- Tungsten CVD nucleation layer (WF6/SiH4)
- Amorphous silicon TFT active layer (display)
Key Features
- 6N ultra-high purity for low defect density polysilicon and epitaxial films
- Pyrophoric gas requiring specialized handling; supplied with safety purge fittings
- Low moisture and oxygen ensures sharp film interfaces and low fixed charge
- Available in high-pressure cylinders and tube trailers for high-consumption fabs
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CAS Number
7803-62-5
Category
Semiconductor Etching ChemicalsAvailability
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