Semiconductor Etching Chemicals

semiconductor etching chemicals

Acetone Semiconductor Grade (Photoresist Removal)

CAS: 67-64-1

Semiconductor grade acetone is an ultra-pure ketone solvent used for dissolving and removing photoresist, cleaning organic residues from wafer surfaces, and stripping lift-off patterns in MEMS and compound semiconductor processes. Its fast evaporation rate and strong solvency power make it effective for quick photoresist removal before wet etching sequences.

semiconductor etching chemicals

Aluminum Chloride ALD Precursor (AlCl3)

CAS: 7446-70-0

Anhydrous aluminum chloride (AlCl3) is used as an ALD (atomic layer deposition) precursor for depositing Al2O3 high-k dielectric and aluminum-containing thin films in semiconductor devices. In ALD processes, alternating exposures of AlCl3 and water (or ozone) produce conformal Al2O3 films with monolayer-level thickness control, critical for gate dielectrics, capacitor dielectrics, and encapsulation layers.

semiconductor etching chemicals

Ammonia Semiconductor Grade (NH3 Nitride CVD)

CAS: 7664-41-7

Semiconductor grade ammonia (NH3) is the nitrogen source for CVD and ALD deposition of silicon nitride (Si3N4), titanium nitride (TiN), aluminum nitride (AlN), and gallium nitride (GaN) thin films. In LPCVD and PECVD processes with DCS or silane, NH3 produces conformal nitride films essential for etch stops, diffusion barriers, and passivation layers throughout IC fabrication.

semiconductor etching chemicals

Ammonium Fluoride Semiconductor Grade (NH4F 40%)

CAS: 12125-01-8

Semiconductor grade ammonium fluoride (40% aqueous solution) is a key component in buffered oxide etch (BOE) formulations and silicon nitride etching chemistry. Its ultra-pure quality ensures minimal metallic contamination on wafer surfaces. It is also used as a pH buffer and fluoride source in various wet process baths.

semiconductor etching chemicals

Ammonium Hydroxide Semiconductor Grade (NH4OH SC-1)

CAS: 1336-21-6

Semiconductor grade ammonium hydroxide (28–30% NH3) is a key component of the RCA SC-1 cleaning solution (NH4OH/H2O2/H2O) used for particle and organic contamination removal from silicon wafers. It also performs light silicon oxide etching to undercut and lift particles. Its ultra-pure quality prevents the introduction of metallic contamination during critical pre-gate-oxide cleaning.

semiconductor etching chemicals

Argon Sputtering Gas (Ar Ultra-Pure)

CAS: 7440-37-1

Ultra-pure argon (Ar) is the primary sputtering and carrier gas in physical vapor deposition (PVD), ion beam etching, and plasma etch processes for semiconductor manufacturing. Argon ions are accelerated to bombard metal and dielectric targets for thin film deposition (Al, Cu, Ti, TiN, TaN) or to perform Ar ion milling for pattern definition in III-V and magnetic device fabrication.

semiconductor etching chemicals

Bottom Anti-Reflective Coating (BARC)

Bottom anti-reflective coating (BARC) is a spin-coated organic or inorganic layer applied beneath the photoresist to suppress standing waves and reflective notching caused by substrate reflectivity during UV and DUV lithography. By tuning film thickness and refractive index (n, k), BARC minimizes reflected light at the resist/substrate interface, improving CD uniformity, resolution, and depth-of-focus in high-volume manufacturing.

semiconductor etching chemicals

Buffered Oxide Etch (BOE) NH4F/HF

CAS: 7664-39-3

Buffered Oxide Etch (BOE) is a mixture of ammonium fluoride (NH4F) and hydrofluoric acid (HF) that provides a stable, controlled etch rate for silicon dioxide. The ammonium fluoride buffer maintains a consistent pH and replenishes fluoride ions, resulting in more uniform and reproducible oxide etch rates compared to straight HF. Widely used in MEMS, CMOS, and display fab processes.

semiconductor etching chemicals

CMP Ceria Slurry (CeO2 Abrasive)

CAS: 1306-38-3

CMP ceria (cerium oxide, CeO2) slurry provides ultra-high oxide removal rates and exceptional planarization efficiency for STI and ILD processes. Ceria abrasives are chemically reactive with SiO2 via Ce-O-Si bonding, enabling higher removal rates at lower downforce compared to silica slurries. High selectivity over silicon nitride makes ceria the preferred abrasive for STI CMP in advanced logic nodes.

semiconductor etching chemicals

CMP Pad Conditioner Diamond Dresser

CMP pad conditioners use electroplated or brazed diamond abrasives on a stainless steel disk to continuously dress and re-texture CMP polishing pads during wafer planarization. Regular conditioning removes glazed pad surfaces and restores the micro-asperity structure necessary for consistent slurry transport and removal rate. Essential for maintaining pad-to-pad and wafer-to-wafer removal rate uniformity.

semiconductor etching chemicals

CMP Silica Slurry (Fumed/Colloidal SiO2)

CAS: 7631-86-9

CMP silica slurry contains highly dispersed fumed or colloidal silicon dioxide abrasive particles in an aqueous medium, used for chemical-mechanical planarization of silicon oxide (ILD), shallow trench isolation (STI), and polysilicon layers. The combination of mechanical abrasion and chemical oxide dissolution achieves global planarity required for multilevel metal interconnect fabrication.

semiconductor etching chemicals

Carbon Tetrafluoride Plasma Etch Gas (CF4)

CAS: 75-73-0

Carbon tetrafluoride (CF4) is a versatile plasma etch gas used for etching silicon oxide, silicon nitride, and silicon in dry etch processes. When combined with oxygen, it etches SiO2 with high selectivity; alone or with H2, it is used for anisotropic silicon and nitride etch. CF4 also serves as a chamber cleaning gas and is used in remote plasma cleans for CVD reactors.

semiconductor etching chemicals

Copper Sulfate Damascene Electroplating (CuSO4)

CAS: 7758-98-7

Semiconductor grade copper sulfate pentahydrate (CuSO4·5H2O) is the primary copper ion source in acidic electroplating baths for damascene and dual-damascene copper interconnect fabrication. Used in combination with sulfuric acid, chloride ions, and organic additives (accelerator, suppressor, leveler), it enables the superfilling (bottom-up fill) of high-aspect-ratio vias and trenches in advanced BEOL processes.

semiconductor etching chemicals

Dichlorosilane CVD Precursor (DCS, SiH2Cl2)

CAS: 4109-96-0

Dichlorosilane (DCS, SiH2Cl2) is a widely used CVD precursor for depositing high-quality silicon nitride (Si3N4), silicon oxynitride (SiON), and polysilicon films in LPCVD processes. The DCS/NH3 chemistry at 750–800°C produces stoichiometric Si3N4 films with excellent uniformity and electrical properties for gate spacers, etch stops, and charge-storage layers in DRAM and flash memory.

semiconductor etching chemicals

Dimethyl Sulfoxide Semiconductor Grade (DMSO)

CAS: 67-68-5

Semiconductor grade dimethyl sulfoxide (DMSO) is a polar aprotic solvent used in photoresist stripping formulations, particularly as a co-solvent with amines to enhance the removal of post-etch and post-ash polymer residues. Its high polarity and low toxicity compared to NMP make it an increasingly preferred solvent in advanced node BEOL cleaning chemistries.

semiconductor etching chemicals

EUV Extreme Ultraviolet Photoresist Polymer

EUV photoresist is a chemically amplified or metal-containing resist polymer optimized for 13.5nm extreme ultraviolet (EUV) lithography in sub-7nm logic and memory device patterning. These advanced resists must balance the conflicting requirements of sensitivity, resolution, and line-edge roughness (LWR/LER). Metal oxide EUV resists (Sn-based or Hf-based) offer higher EUV absorption and improved resolution compared to organic CAR platforms.

semiconductor etching chemicals

Edge Bead Remover (EBR) Solvent for Wafer Edge

Edge bead remover (EBR) is a precisely formulated solvent blend used to dissolve and remove the photoresist bead that accumulates at the wafer edge during spin-coating. The EBR is dispensed on the front edge (EBR front) or back edge (EBR back) of the rotating wafer immediately after resist coat, preventing edge bead contamination of wafer handling equipment and chucks during subsequent lithography steps.

semiconductor etching chemicals

Electroless Nickel Sodium Hypophosphite (NaH2PO2)

CAS: 7681-53-0

Sodium hypophosphite monohydrate (NaH2PO2·H2O) is the reducing agent in electroless nickel (EN) plating baths, enabling autocatalytic deposition of nickel-phosphorus alloy without external current. In semiconductor packaging, ENIG (Electroless Nickel Immersion Gold) and ENEPIG surface finishes rely on sodium hypophosphite-based EN baths to provide solderable, wire-bondable, and corrosion-resistant surfaces on PCBs and substrates.

semiconductor etching chemicals

Ethylene Glycol Monobutyl Ether (EGBE) Developer Solvent

CAS: 111-76-2

Semiconductor grade ethylene glycol monobutyl ether (EGBE, also known as butyl cellosolve) is used as a co-solvent in photoresist developer formulations and as a cleaning agent for equipment and fixtures. Its moderate evaporation rate and compatibility with aqueous alkaline developers make it useful in optimizing developer spreading and uniformity on wafer surfaces.

semiconductor etching chemicals

Gold Cyanide Electroplating Solution (KAu(CN)2)

CAS: 13967-50-5

Potassium gold cyanide (KAu(CN)2) is the primary gold salt used in semiconductor gold electroplating baths for wire bonding pad plating, connector contact finishing, and optoelectronic device metallization. Its stable cyanide complex provides smooth, bright gold deposits with excellent wire bondability and corrosion resistance. Used in both acid and neutral pH bath formulations.

semiconductor etching chemicals

Hexamethyldisilazane (HMDS) Adhesion Promoter

CAS: 999-97-3

Hexamethyldisilazane (HMDS) is the universal photoresist adhesion promoter used in semiconductor lithography. Applied by vapor prime or spin-coat before photoresist coating, HMDS reacts with surface OH groups to form a hydrophobic trimethylsilyl (TMS) monolayer, dramatically improving photoresist adhesion on oxide and nitride surfaces and preventing pattern delamination during development.

semiconductor etching chemicals

Hydrochloric Acid Semiconductor Grade (HCl 37%)

CAS: 7647-01-0

Semiconductor grade hydrochloric acid (37%) is a critical chemical in RCA SC-2 cleaning for metal ion removal and oxide stripping. It forms complexes with heavy metals and removes them from wafer surfaces, and is used in HCl/H2O2/H2O (SC-2) mixtures to eliminate alkali metals and heavy metal contamination before oxidation furnace steps.

semiconductor etching chemicals

Hydrofluoric Acid Semiconductor Grade (HF 49%)

CAS: 7664-39-3

Semiconductor grade hydrofluoric acid (49% HF) is an ultra-pure aqueous solution used for silicon oxide etching, native oxide removal, and wafer surface cleaning. It meets SEMI C1 or SEMI C8 purity specifications with metallic impurities at sub-ppb levels. Critical for front-end-of-line (FEOL) wet etch processes in IC fabrication.

semiconductor etching chemicals

Hydrogen Peroxide Semiconductor Grade (H2O2 30%)

CAS: 7722-84-1

Semiconductor grade hydrogen peroxide (30%) is an essential oxidizing agent used in RCA SC-1 and SC-2 wafer cleaning processes to remove organic and ionic contamination. When mixed with ammonium hydroxide (SC-1) it removes particles and organics; with HCl (SC-2) it dissolves metal ions. It is also a key component of SPM piranha cleaning.

semiconductor etching chemicals

Isopropanol Semiconductor Grade (IPA Ultra-Pure)

CAS: 67-63-0

Semiconductor grade isopropanol (IPA) is an ultra-pure solvent used for wafer drying (Marangoni drying), photoresist dilution, cleaning of equipment surfaces, and as a final rinse solvent in wet bench processes. Its low water content and sub-ppb metallic impurity levels make it suitable for critical front-end and back-end semiconductor cleaning applications.

semiconductor etching chemicals

N-Methyl-2-Pyrrolidone Semiconductor Grade (NMP)

CAS: 872-50-4

Semiconductor grade N-Methyl-2-Pyrrolidone (NMP) is a high-boiling polar aprotic solvent widely used as a photoresist stripper and residue remover in back-end-of-line (BEOL) processes. Its excellent solvency for cross-linked resists and low vapor pressure make it ideal for single-wafer spin-clean tools and immersion strip baths. Ultra-pure grade ensures no metallic contamination of interconnect layers.

semiconductor etching chemicals

Nickel Sulfamate Electroplating Solution

CAS: 13770-89-3

Nickel sulfamate (Ni(SO3NH2)2) is the preferred nickel salt for electroplating applications requiring low internal stress, high deposit hardness, and excellent ductility. In semiconductor packaging, it is used for MEMS electroforming, under-bump metallization (UBM), and magnetic actuator fabrication. Its low-stress deposits are critical for high-aspect-ratio LIGA microstructures.

semiconductor etching chemicals

Nitric Acid Semiconductor Grade (HNO3 69%)

CAS: 7697-37-2

Semiconductor grade nitric acid (69%) is used in silicon etching chemistry, metal surface oxidation, and wafer cleaning processes. In combination with HF, it forms the standard silicon etch mixture (HNA: HF/HNO3/HAc) for isotropic silicon etching. Its ultra-pure formulation meets SEMI C1 standards with trace metal content below 1 ppb.

semiconductor etching chemicals

Nitrogen Trifluoride Chamber Clean Gas (NF3)

CAS: 7783-54-2

Nitrogen trifluoride (NF3) is the preferred remote plasma chamber cleaning gas for CVD and ALD reactors, replacing C2F6 and CF4 due to its superior global warming potential (GWP) profile and higher utilization efficiency. NF3 plasma generates reactive F radicals that efficiently remove silicon-based deposits (SiO2, Si3N4, a-Si) from CVD chamber walls without requiring wafer exposure, dramatically reducing chamber downtime.

semiconductor etching chemicals

Octafluorocyclobutane Dielectric Etch Gas (c-C4F8)

CAS: 115-25-3

Octafluorocyclobutane (c-C4F8) is a fluorocarbon gas used as the primary dielectric etch chemistry for high-selectivity oxide and nitride plasma etching in advanced semiconductor patterning. Its high C:F ratio generates polymer-forming precursors in the plasma that passivate sidewalls and silicon surfaces, providing exceptional SiO2/Si selectivity. Also used as the passivation gas in Bosch DRIE silicon etch cycles.

semiconductor etching chemicals

Palladium Chloride Plating Activation (PdCl2)

CAS: 13138-48-2

Palladium chloride (PdCl2) solution is used as an activation catalyst for electroless plating on non-conductive substrates and for sensitizing surfaces prior to electroless nickel or copper deposition. In semiconductor packaging, it enables selective metal deposition on dielectric surfaces for PCB vias, wafer-level packaging, and advanced substrate manufacturing.

semiconductor etching chemicals

Phosphoric Acid Semiconductor Grade (H3PO4 85%)

CAS: 7664-38-2

Semiconductor grade phosphoric acid (85%) is the standard wet etchant for silicon nitride (Si3N4) with high selectivity over silicon dioxide and silicon. When heated to 160–180°C, it selectively etches Si3N4 at rates of 50–100 Å/min, making it essential for STI and LOCOS process integration. Ultra-pure quality minimizes particle and metal contamination.

semiconductor etching chemicals

Piranha Solution Sulfuric Peroxide Mixture (SPM)

Piranha solution (SPM: sulfuric acid/hydrogen peroxide mixture, typically H2SO4:H2O2 = 3:1 to 7:1 v/v) is a highly oxidizing cleaning solution used to remove heavy organic contamination, photoresist residues, and metallic particles from silicon wafer surfaces. The exothermic mixture generates peroxymonosulfuric acid (Caro's acid) which aggressively oxidizes organic matter. Used in both batch and single-wafer SPM tools.

semiconductor etching chemicals

Positive Photoresist Developer CD-26 (TMAH 2.38%)

CAS: 75-59-2

CD-26 photoresist developer is a precisely formulated 2.38% tetramethylammonium hydroxide (TMAH) aqueous solution that is the industry-standard developer for positive tone novolac and chemically amplified photoresists. Metal-ion-free chemistry eliminates alkali metal contamination, and the precise TMAH concentration provides predictable, reproducible development contrast and CD control.

semiconductor etching chemicals

Positive Photoresist Novolac (g-line/i-line)

Novolac-based positive photoresists are the classical lithography material for g-line (436nm) and i-line (365nm) UV exposure in semiconductor patterning. Composed of novolac resin and diazonaphthoquinone (DNQ) photoactive compound in PGMEA/PGME solvent, they provide excellent resolution to 0.35 µm, high etch resistance, and compatibility with standard TMAH developers. Widely used in MEMS, display, and legacy CMOS processes.

semiconductor etching chemicals

Potassium Hydroxide Silicon Anisotropic Etch (KOH)

CAS: 1310-58-3

Potassium hydroxide (KOH) aqueous solution is the classical anisotropic silicon etchant used in MEMS fabrication, offering extremely high selectivity between crystallographic planes. Typical concentrations of 20–40 wt% at 70–80°C provide well-controlled etch rates with excellent {100}/{111} selectivity exceeding 100:1. KOH is the preferred etchant for non-CMOS MEMS devices where alkali metal contamination is acceptable.

semiconductor etching chemicals

Propylene Glycol Monomethyl Ether Acetate (PGMEA)

CAS: 108-65-6

PGMEA (propylene glycol monomethyl ether acetate) is the dominant photoresist solvent used in advanced lithography processes for 193nm and EUV resist formulations. Its optimal evaporation rate, excellent resin solvency, and low toxicity make it the industry standard casting solvent for positive and negative tone resists. Ultra-pure semiconductor grade minimizes defects and ensures consistent film uniformity.

semiconductor etching chemicals

RCA SC-1 Clean Reagent (NH4OH/H2O2/H2O)

RCA SC-1 (Standard Clean 1, APM: Ammonia-Peroxide Mixture) is a ready-to-use or component-supplied cleaning system using NH4OH:H2O2:H2O (1:1:5 to 1:2:10 v/v) at 65–80°C to remove particles and light organic contamination from silicon wafer surfaces. The mild oxide etch component lifts particles while H2O2 oxidizes organic matter, achieving sub-0.1 count/cm2 particle levels after clean.

semiconductor etching chemicals

SU-8 Epoxy Negative Photoresist

SU-8 is a chemically amplified, epoxy-based negative-tone photoresist capable of producing very thick (1–500 µm), high-aspect-ratio (>20:1) microstructures with near-vertical sidewalls. Widely adopted for MEMS fabrication, microfluidics, and advanced packaging, SU-8 crosslinks upon UV or near-UV exposure to form a chemically and mechanically robust permanent or sacrificial structure suitable for demanding applications.

semiconductor etching chemicals

Silane (Monosilane) CVD Precursor (SiH4)

CAS: 7803-62-5

Monosilane (SiH4) is the fundamental silicon CVD precursor used for depositing polysilicon gates, epitaxial silicon, PECVD silicon nitride (with NH3), PECVD silicon oxide (with N2O/O2), and amorphous silicon thin films. It is also the nucleation precursor for tungsten CVD (WF6/SiH4) and silicon-based dielectric deposition processes across the semiconductor industry.

semiconductor etching chemicals

Spin-On Glass Silicate (SOG Silicate Planarization)

Silicate spin-on glass (SOG) is an inorganic spin-coatable dielectric material based on silicon orthosilicate precursors in an alcohol solvent. Upon spin-coating and curing at 400–450°C, it forms a dense SiO2 film for gap-fill planarization between metal lines in BEOL processes. Silicate SOG provides excellent gap-fill capability for high-aspect-ratio spaces but requires etch-back to avoid cracking in thick applications.

semiconductor etching chemicals

Spin-On Glass Siloxane (Siloxane SOG Dielectric)

Siloxane spin-on glass (SOG) incorporates methyl or phenyl siloxane groups into the SiO2 network, providing a lower dielectric constant (k = 2.7–3.5) and reduced moisture absorption compared to pure silicate SOG. The organic Si-CH3 groups reduce film brittleness and allow thicker coatings without cracking, making siloxane SOG suitable for low-k ILD applications in advanced interconnect processes.

semiconductor etching chemicals

Sulfur Hexafluoride Silicon Plasma Etch (SF6)

CAS: 2551-62-4

Sulfur hexafluoride (SF6) is a high-fluorine-content gas widely used as the primary etchant in silicon plasma etching processes, including MEMS deep reactive ion etching (DRIE), silicon trench etch, and polysilicon gate patterning. In the Bosch DRIE process, SF6 alternates with C4F8 passivation cycles to achieve ultra-deep, high-aspect-ratio silicon trenches with vertical sidewalls.

semiconductor etching chemicals

Sulfuric Acid Semiconductor Grade (H2SO4 96%)

CAS: 7664-93-9

Semiconductor grade sulfuric acid (96%) is a primary chemical used in SPM (sulfuric acid/hydrogen peroxide mixture, piranha) cleaning to remove organic photoresist and contaminants from wafer surfaces. Its ultra-high purity ensures no introduction of metallic impurities during critical cleaning steps. Also used in electroplating baths for copper damascene processes.

semiconductor etching chemicals

Tetraethyl Orthosilicate (TEOS) CVD Precursor

CAS: 78-10-4

Tetraethyl orthosilicate (TEOS, Si(OC2H5)4) is the dominant precursor for CVD silicon dioxide deposition in semiconductor manufacturing. TEOS-based PECVD and SACVD processes deposit high-quality SiO2 films with excellent step coverage and conformality at temperatures of 300–750°C. TEOS oxide is used as ILD, STI liner, spacer, and hard mask in CMOS front-end and back-end processes.

semiconductor etching chemicals

Tetramethylammonium Hydroxide (TMAH 25%)

CAS: 75-59-2

Tetramethylammonium hydroxide (TMAH, 25% aqueous) is a metal-ion-free alkaline etchant that anisotropically etches silicon along crystal planes, providing high selectivity between {100} and {111} planes. It is widely used in MEMS micromachining for fabricating membranes, cantilevers, and microstructures. As a CMOS-compatible alternative to KOH, TMAH introduces no alkali metal contamination.

semiconductor etching chemicals

Titanium Tetrachloride CVD/ALD Precursor (TiCl4)

CAS: 7550-45-0

Titanium tetrachloride (TiCl4) is the primary precursor for CVD and ALD deposition of titanium-containing thin films including TiN diffusion barriers, TiO2 high-k dielectrics, and TiSi2 contact silicide. TiCl4-based ALD with NH3 or N2/H2 plasma produces conformal TiN barrier layers in 3D NAND and DRAM capacitor structures. Its high vapor pressure and thermal stability make it ideal for high-throughput semiconductor manufacturing.

semiconductor etching chemicals

Trimethylsilyl Diethylamine (TMSDEA) Silylation Agent

CAS: 996-50-9

Trimethylsilyl diethylamine (TMSDEA) is a silylation reagent used in semiconductor lithography to modify photoresist surface chemistry and enhance adhesion. As a surface treatment agent for silylated resist processes (e.g., DESIRE process), it converts OH groups on resist surfaces to OSi(CH3)3 groups, improving etch selectivity. Also used in ALD surface functionalization and low-k dielectric surface repair.

semiconductor etching chemicals

Tungsten Hexafluoride CVD Precursor (WF6)

CAS: 7783-82-6

Tungsten hexafluoride (WF6) is the standard CVD precursor for depositing tungsten metal films used as contact plugs, local interconnects, and wordlines in DRAM and NAND flash memory. Reacted with SiH4 (nucleation layer) followed by H2 reduction, WF6 deposits highly pure, low-resistivity tungsten metal that fills sub-100nm contact holes with excellent void-free coverage.

semiconductor etching chemicals

Wafer Cleaning SC-2 Reagent (HCl/H2O2/H2O)

RCA SC-2 (Standard Clean 2, HPM: Hydrochloric acid-Peroxide Mixture) uses HCl:H2O2:H2O (1:1:6 v/v) at 65–80°C to remove alkali metals (Na, K) and heavy metal contamination (Au, Cu, Fe) from silicon wafer surfaces through metal-chloride complex formation. SC-2 is the second step in the standard RCA clean sequence, performed after SC-1 to achieve sub-ppb metal levels essential for high-integrity gate oxides.