Piranha Solution Sulfuric Peroxide Mixture (SPM)
Piranha solution (SPM: sulfuric acid/hydrogen peroxide mixture, typically H2SO4:H2O2 = 3:1 to 7:1 v/v) is a highly oxidizing cleaning solution used to remove heavy organic contamination, photoresist residues, and metallic particles from silicon wafer surfaces. The exothermic mixture generates peroxymonosulfuric acid (Caro's acid) which aggressively oxidizes organic matter. Used in both batch and single-wafer SPM tools.
Technical Specifications
| appearance | Colorless fuming liquid (when mixed) |
| purity (%) | ≥99.5 (H2SO4 component, pre-mix) |
| temperature during use | 120–150°C (exothermic) |
| H2SO4:H2O2 mixing ratio | 3:1 to 7:1 (v/v, customizable) |
| metallic impurities (pre-mix) | ≤1 ppb each |
Applications
- Heavy photoresist and polymer strip after ion implant
- Organic contamination removal before thermal oxidation
- Metal particle and ionic contamination clean
- Pre-diffusion furnace wafer strip clean
- Post-CMP organic residue removal
Key Features
- Extremely aggressive organics removal including cross-linked and ion-implanted resists
- Supplied as separate H2SO4 and H2O2 components for on-site mixing safety
- Compatible with single-wafer hot SPM dispensing tools
- Ultra-pure component grade minimizes metal recontamination during strip
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