Positive Photoresist Novolac (g-line/i-line)
Novolac-based positive photoresists are the classical lithography material for g-line (436nm) and i-line (365nm) UV exposure in semiconductor patterning. Composed of novolac resin and diazonaphthoquinone (DNQ) photoactive compound in PGMEA/PGME solvent, they provide excellent resolution to 0.35 µm, high etch resistance, and compatibility with standard TMAH developers. Widely used in MEMS, display, and legacy CMOS processes.
Technical Specifications
| appearance | Amber to dark amber viscous liquid |
| purity (%) | ≥99.5 (solids content by formulation) |
| resolution | ≤0.35 µm (i-line) |
| viscosity (cP) | 10–10000 (multiple grades available) |
| sensitivity (mJ/cm2) | 80–150 (i-line, dose-to-clear) |
Applications
- MEMS device layer patterning (thick resist >10 µm)
- Display TFT photolithography (g-line/i-line stepper)
- Legacy CMOS process nodes (0.35–1 µm)
- Lift-off metal patterning with undercut profile
- PCB and wafer-level packaging photolithography
Key Features
- Wide process latitude with broad focus and exposure dose windows
- Excellent adhesion on SiO2, Si3N4, and metals with HMDS priming
- High plasma etch resistance for demanding dry etch patterning
- Available in thin (1–5 µm) and thick (10–100 µm) coating formulations
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