Spin-On Glass Siloxane (Siloxane SOG Dielectric)
Siloxane spin-on glass (SOG) incorporates methyl or phenyl siloxane groups into the SiO2 network, providing a lower dielectric constant (k = 2.7–3.5) and reduced moisture absorption compared to pure silicate SOG. The organic Si-CH3 groups reduce film brittleness and allow thicker coatings without cracking, making siloxane SOG suitable for low-k ILD applications in advanced interconnect processes.
Technical Specifications
| appearance | Clear colorless to slightly yellow solution |
| purity (%) | ≥99.5 (siloxane polymer content) |
| cure temperature | 200–400°C |
| cured film hardness (GPa) | 1.5–3.0 |
| dielectric constant (cured) | 2.7–3.5 |
Applications
- Low-k ILD for BEOL interconnect dielectric
- Thick gap-fill without crack formation
- Hydrogen silsesquioxane (HSQ) alternative for low-k
- MEMS isolation and passivation layer
- Advanced packaging low-k dielectric coating
Key Features
- Lower dielectric constant (k<3.5) reduces RC delay in metal interconnects
- Improved crack resistance allows films up to 1 µm without etch-back
- Good thermal stability up to 450°C for Al and Cu process compatibility
- Adjustable organic content for k-value and mechanical property tuning
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