Spin-On Glass Silicate (SOG Silicate Planarization)
Silicate spin-on glass (SOG) is an inorganic spin-coatable dielectric material based on silicon orthosilicate precursors in an alcohol solvent. Upon spin-coating and curing at 400–450°C, it forms a dense SiO2 film for gap-fill planarization between metal lines in BEOL processes. Silicate SOG provides excellent gap-fill capability for high-aspect-ratio spaces but requires etch-back to avoid cracking in thick applications.
Technical Specifications
| appearance | Clear colorless solution |
| purity (%) | ≥99.5 (SiO2 equivalent after cure) |
| viscosity (cP) | 5–50 (adjustable for target thickness) |
| cured film refractive index | 1.44–1.46 |
| dielectric constant (cured) | 3.9–4.1 |
Applications
- BEOL inter-metal dielectric (IMD) gap-fill
- Planarization of high-aspect-ratio metal topography
- Etch-back SOG ILD planarization process
- Passivation layer between metal levels
- Sacrificial gap-fill for MEMS processes
Key Features
- Excellent gap-fill for sub-0.25 µm metal line spaces without voids
- Low cure temperature (400°C) compatible with Al metallization processes
- Tunable viscosity for single- or multi-coat planarization strategies
- Compatible with oxide CMP for hybrid SOG-CMP planarization schemes
Send Inquiry
More in Semiconductor Etching Chemicals
Acetone Semiconductor Grade (Photoresist Removal)
67-64-1
Aluminum Chloride ALD Precursor (AlCl3)
7446-70-0
Ammonia Semiconductor Grade (NH3 Nitride CVD)
7664-41-7
Ammonium Fluoride Semiconductor Grade (NH4F 40%)
12125-01-8
Ammonium Hydroxide Semiconductor Grade (NH4OH SC-1)
1336-21-6
Argon Sputtering Gas (Ar Ultra-Pure)
7440-37-1
Bottom Anti-Reflective Coating (BARC)
Buffered Oxide Etch (BOE) NH4F/HF
7664-39-3