CMP Silica Slurry (Fumed/Colloidal SiO2)
CAS Number: 7631-86-9
CMP silica slurry contains highly dispersed fumed or colloidal silicon dioxide abrasive particles in an aqueous medium, used for chemical-mechanical planarization of silicon oxide (ILD), shallow trench isolation (STI), and polysilicon layers. The combination of mechanical abrasion and chemical oxide dissolution achieves global planarity required for multilevel metal interconnect fabrication.
Technical Specifications
| appearance | White milky colloidal suspension |
| pH (25°C) | 10–11 (alkaline grade) |
| purity (%) | ≥99.5 (SiO2 content) |
| metallic impurities | ≤100 ppb each |
| particle size (D50) | 50–150 nm |
Applications
- ILD (inter-layer dielectric) oxide CMP planarization
- STI (shallow trench isolation) oxide polish
- Polysilicon and poly-Si gate CMP
- Tungsten (W) plug CMP stop-on-oxide
- Substrate backgrinding and thinning
Key Features
- Tunable removal rate via particle size and concentration adjustment
- High oxide-to-nitride selectivity (>20:1) for STI applications
- Low defectivity formulation minimizes scratches on polished surfaces
- Compatible with leading CMP tool platforms (Applied Materials, Ebara)
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CAS Number
7631-86-9
Category
Semiconductor Etching ChemicalsAvailability
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