Hydrofluoric Acid Semiconductor Grade (HF 49%)
CAS Number: 7664-39-3
Semiconductor grade hydrofluoric acid (49% HF) is an ultra-pure aqueous solution used for silicon oxide etching, native oxide removal, and wafer surface cleaning. It meets SEMI C1 or SEMI C8 purity specifications with metallic impurities at sub-ppb levels. Critical for front-end-of-line (FEOL) wet etch processes in IC fabrication.
Technical Specifications
| appearance | Colorless clear liquid |
| purity (%) | ≥49.0 (HF assay) |
| sulfate (SO4) | ≤0.1 ppm |
| metallic impurities | ≤1 ppb each (SEMI C8 grade) |
| particles (≥0.5 µm) | ≤50 per mL |
Applications
- Silicon oxide (SiO2) wet etching
- Native oxide removal before thin film deposition
- Wafer surface pre-clean (HF-last process)
- Buffered oxide etch (BOE) formulation base
- MEMS silicon release etching
Key Features
- SEMI C8 ultra-high purity grade with sub-ppb metallic contamination
- Highly selective etch of SiO2 over Si with precise etch rate control
- Supplied in HDPE or FEP containers to prevent contamination
- Compatible with dilute HF (DHF) formulations at any concentration
Send Inquiry
CAS Number
7664-39-3
Category
Semiconductor Etching ChemicalsAvailability
In StockSample
Dispatched within 5 days
More in Semiconductor Etching Chemicals
Acetone Semiconductor Grade (Photoresist Removal)
67-64-1
Aluminum Chloride ALD Precursor (AlCl3)
7446-70-0
Ammonia Semiconductor Grade (NH3 Nitride CVD)
7664-41-7
Ammonium Fluoride Semiconductor Grade (NH4F 40%)
12125-01-8
Ammonium Hydroxide Semiconductor Grade (NH4OH SC-1)
1336-21-6
Argon Sputtering Gas (Ar Ultra-Pure)
7440-37-1
Bottom Anti-Reflective Coating (BARC)
Buffered Oxide Etch (BOE) NH4F/HF
7664-39-3