CMP Ceria Slurry (CeO2 Abrasive)
CAS Number: 1306-38-3
CMP ceria (cerium oxide, CeO2) slurry provides ultra-high oxide removal rates and exceptional planarization efficiency for STI and ILD processes. Ceria abrasives are chemically reactive with SiO2 via Ce-O-Si bonding, enabling higher removal rates at lower downforce compared to silica slurries. High selectivity over silicon nitride makes ceria the preferred abrasive for STI CMP in advanced logic nodes.
Technical Specifications
| appearance | White to pale yellow colloidal suspension |
| pH (25°C) | 4–8 (adjustable) |
| purity (%) | ≥99.9 (CeO2 assay) |
| particle size (D50) | 100–300 nm |
| removal rate (SiO2) | 500–3000 Å/min (process-dependent) |
Applications
- STI CMP with high oxide-to-nitride selectivity
- ILD (PMD/IMD) rapid oxide planarization
- Pre-metal dielectric (PMD) CMP
- Advanced node high-k/metal gate CMP
- Optical glass and ceramic substrate polishing
Key Features
- Chemical-mechanical synergy gives 5–10x higher removal rate than silica
- Tunable STI selectivity (oxide:nitride) from 5:1 to >100:1
- Low defect density formulation with controlled large particle counts
- Available in both free-abrasive and fixed-abrasive pad-compatible forms
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CAS Number
1306-38-3
Category
Semiconductor Etching ChemicalsAvailability
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