EUV Extreme Ultraviolet Photoresist Polymer
EUV photoresist is a chemically amplified or metal-containing resist polymer optimized for 13.5nm extreme ultraviolet (EUV) lithography in sub-7nm logic and memory device patterning. These advanced resists must balance the conflicting requirements of sensitivity, resolution, and line-edge roughness (LWR/LER). Metal oxide EUV resists (Sn-based or Hf-based) offer higher EUV absorption and improved resolution compared to organic CAR platforms.
Technical Specifications
| LWR (3σ) | ≤2.5 nm |
| appearance | Clear to pale amber solution in PGMEA |
| purity (%) | ≥99.9 (polymer solids in casting solvent) |
| resolution | ≤13 nm HP (half-pitch) |
| sensitivity (mJ/cm2) | 15–40 (EUV dose-to-size) |
Applications
- Sub-7nm logic node critical layer patterning
- DRAM capacitor and bit-line EUV patterning
- NAND flash string select and contact EUV
- High-NA EUV (0.55NA) advanced node resist
- EUV direct-print single exposure patterning
Key Features
- Optimized for 13.5nm EUV scanners (ASML NXE and EXE platforms)
- High EUV absorption coefficient for improved photon efficiency
- Low outgassing to prevent mirror contamination in EUV scanners
- Compatible with TMAH 2.38% standard developer or novel solvent developers
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