semiconductor etching chemicals

Acetone Semiconductor Grade (Photoresist Removal)

CAS: 67-64-1

Semiconductor grade acetone is an ultra-pure ketone solvent used for dissolving and removing photoresist, cleaning organic residues from wafer surfaces, and stripping lift-off patterns in MEMS and compound semiconductor processes. Its fast evaporation rate and strong solvency power make it effective for quick photoresist removal before wet etching sequences.

semiconductor etching chemicals

Aluminum Chloride ALD Precursor (AlCl3)

CAS: 7446-70-0

Anhydrous aluminum chloride (AlCl3) is used as an ALD (atomic layer deposition) precursor for depositing Al2O3 high-k dielectric and aluminum-containing thin films in semiconductor devices. In ALD processes, alternating exposures of AlCl3 and water (or ozone) produce conformal Al2O3 films with monolayer-level thickness control, critical for gate dielectrics, capacitor dielectrics, and encapsulation layers.

semiconductor etching chemicals

Ammonia Semiconductor Grade (NH3 Nitride CVD)

CAS: 7664-41-7

Semiconductor grade ammonia (NH3) is the nitrogen source for CVD and ALD deposition of silicon nitride (Si3N4), titanium nitride (TiN), aluminum nitride (AlN), and gallium nitride (GaN) thin films. In LPCVD and PECVD processes with DCS or silane, NH3 produces conformal nitride films essential for etch stops, diffusion barriers, and passivation layers throughout IC fabrication.

semiconductor etching chemicals

Ammonium Fluoride Semiconductor Grade (NH4F 40%)

CAS: 12125-01-8

Semiconductor grade ammonium fluoride (40% aqueous solution) is a key component in buffered oxide etch (BOE) formulations and silicon nitride etching chemistry. Its ultra-pure quality ensures minimal metallic contamination on wafer surfaces. It is also used as a pH buffer and fluoride source in various wet process baths.

semiconductor etching chemicals

Ammonium Hydroxide Semiconductor Grade (NH4OH SC-1)

CAS: 1336-21-6

Semiconductor grade ammonium hydroxide (28–30% NH3) is a key component of the RCA SC-1 cleaning solution (NH4OH/H2O2/H2O) used for particle and organic contamination removal from silicon wafers. It also performs light silicon oxide etching to undercut and lift particles. Its ultra-pure quality prevents the introduction of metallic contamination during critical pre-gate-oxide cleaning.

semiconductor etching chemicals

Argon Sputtering Gas (Ar Ultra-Pure)

CAS: 7440-37-1

Ultra-pure argon (Ar) is the primary sputtering and carrier gas in physical vapor deposition (PVD), ion beam etching, and plasma etch processes for semiconductor manufacturing. Argon ions are accelerated to bombard metal and dielectric targets for thin film deposition (Al, Cu, Ti, TiN, TaN) or to perform Ar ion milling for pattern definition in III-V and magnetic device fabrication.

semiconductor etching chemicals

Bottom Anti-Reflective Coating (BARC)

Bottom anti-reflective coating (BARC) is a spin-coated organic or inorganic layer applied beneath the photoresist to suppress standing waves and reflective notching caused by substrate reflectivity during UV and DUV lithography. By tuning film thickness and refractive index (n, k), BARC minimizes reflected light at the resist/substrate interface, improving CD uniformity, resolution, and depth-of-focus in high-volume manufacturing.

semiconductor etching chemicals

Buffered Oxide Etch (BOE) NH4F/HF

CAS: 7664-39-3

Buffered Oxide Etch (BOE) is a mixture of ammonium fluoride (NH4F) and hydrofluoric acid (HF) that provides a stable, controlled etch rate for silicon dioxide. The ammonium fluoride buffer maintains a consistent pH and replenishes fluoride ions, resulting in more uniform and reproducible oxide etch rates compared to straight HF. Widely used in MEMS, CMOS, and display fab processes.

semiconductor etching chemicals

CMP Ceria Slurry (CeO2 Abrasive)

CAS: 1306-38-3

CMP ceria (cerium oxide, CeO2) slurry provides ultra-high oxide removal rates and exceptional planarization efficiency for STI and ILD processes. Ceria abrasives are chemically reactive with SiO2 via Ce-O-Si bonding, enabling higher removal rates at lower downforce compared to silica slurries. High selectivity over silicon nitride makes ceria the preferred abrasive for STI CMP in advanced logic nodes.

semiconductor etching chemicals

CMP Pad Conditioner Diamond Dresser

CMP pad conditioners use electroplated or brazed diamond abrasives on a stainless steel disk to continuously dress and re-texture CMP polishing pads during wafer planarization. Regular conditioning removes glazed pad surfaces and restores the micro-asperity structure necessary for consistent slurry transport and removal rate. Essential for maintaining pad-to-pad and wafer-to-wafer removal rate uniformity.

semiconductor etching chemicals

CMP Silica Slurry (Fumed/Colloidal SiO2)

CAS: 7631-86-9

CMP silica slurry contains highly dispersed fumed or colloidal silicon dioxide abrasive particles in an aqueous medium, used for chemical-mechanical planarization of silicon oxide (ILD), shallow trench isolation (STI), and polysilicon layers. The combination of mechanical abrasion and chemical oxide dissolution achieves global planarity required for multilevel metal interconnect fabrication.

semiconductor etching chemicals

Carbon Tetrafluoride Plasma Etch Gas (CF4)

CAS: 75-73-0

Carbon tetrafluoride (CF4) is a versatile plasma etch gas used for etching silicon oxide, silicon nitride, and silicon in dry etch processes. When combined with oxygen, it etches SiO2 with high selectivity; alone or with H2, it is used for anisotropic silicon and nitride etch. CF4 also serves as a chamber cleaning gas and is used in remote plasma cleans for CVD reactors.

semiconductor etching chemicals

Copper Sulfate Damascene Electroplating (CuSO4)

CAS: 7758-98-7

Semiconductor grade copper sulfate pentahydrate (CuSO4·5H2O) is the primary copper ion source in acidic electroplating baths for damascene and dual-damascene copper interconnect fabrication. Used in combination with sulfuric acid, chloride ions, and organic additives (accelerator, suppressor, leveler), it enables the superfilling (bottom-up fill) of high-aspect-ratio vias and trenches in advanced BEOL processes.

semiconductor etching chemicals

Dichlorosilane CVD Precursor (DCS, SiH2Cl2)

CAS: 4109-96-0

Dichlorosilane (DCS, SiH2Cl2) is a widely used CVD precursor for depositing high-quality silicon nitride (Si3N4), silicon oxynitride (SiON), and polysilicon films in LPCVD processes. The DCS/NH3 chemistry at 750–800°C produces stoichiometric Si3N4 films with excellent uniformity and electrical properties for gate spacers, etch stops, and charge-storage layers in DRAM and flash memory.

semiconductor etching chemicals

Dimethyl Sulfoxide Semiconductor Grade (DMSO)

CAS: 67-68-5

Semiconductor grade dimethyl sulfoxide (DMSO) is a polar aprotic solvent used in photoresist stripping formulations, particularly as a co-solvent with amines to enhance the removal of post-etch and post-ash polymer residues. Its high polarity and low toxicity compared to NMP make it an increasingly preferred solvent in advanced node BEOL cleaning chemistries.

semiconductor etching chemicals

EUV Extreme Ultraviolet Photoresist Polymer

EUV photoresist is a chemically amplified or metal-containing resist polymer optimized for 13.5nm extreme ultraviolet (EUV) lithography in sub-7nm logic and memory device patterning. These advanced resists must balance the conflicting requirements of sensitivity, resolution, and line-edge roughness (LWR/LER). Metal oxide EUV resists (Sn-based or Hf-based) offer higher EUV absorption and improved resolution compared to organic CAR platforms.

semiconductor etching chemicals

Edge Bead Remover (EBR) Solvent for Wafer Edge

Edge bead remover (EBR) is a precisely formulated solvent blend used to dissolve and remove the photoresist bead that accumulates at the wafer edge during spin-coating. The EBR is dispensed on the front edge (EBR front) or back edge (EBR back) of the rotating wafer immediately after resist coat, preventing edge bead contamination of wafer handling equipment and chucks during subsequent lithography steps.

semiconductor etching chemicals

Electroless Nickel Sodium Hypophosphite (NaH2PO2)

CAS: 7681-53-0

Sodium hypophosphite monohydrate (NaH2PO2·H2O) is the reducing agent in electroless nickel (EN) plating baths, enabling autocatalytic deposition of nickel-phosphorus alloy without external current. In semiconductor packaging, ENIG (Electroless Nickel Immersion Gold) and ENEPIG surface finishes rely on sodium hypophosphite-based EN baths to provide solderable, wire-bondable, and corrosion-resistant surfaces on PCBs and substrates.

semiconductor etching chemicals

Ethylene Glycol Monobutyl Ether (EGBE) Developer Solvent

CAS: 111-76-2

Semiconductor grade ethylene glycol monobutyl ether (EGBE, also known as butyl cellosolve) is used as a co-solvent in photoresist developer formulations and as a cleaning agent for equipment and fixtures. Its moderate evaporation rate and compatibility with aqueous alkaline developers make it useful in optimizing developer spreading and uniformity on wafer surfaces.

semiconductor etching chemicals

Gold Cyanide Electroplating Solution (KAu(CN)2)

CAS: 13967-50-5

Potassium gold cyanide (KAu(CN)2) is the primary gold salt used in semiconductor gold electroplating baths for wire bonding pad plating, connector contact finishing, and optoelectronic device metallization. Its stable cyanide complex provides smooth, bright gold deposits with excellent wire bondability and corrosion resistance. Used in both acid and neutral pH bath formulations.

semiconductor etching chemicals

Hexamethyldisilazane (HMDS) Adhesion Promoter

CAS: 999-97-3

Hexamethyldisilazane (HMDS) is the universal photoresist adhesion promoter used in semiconductor lithography. Applied by vapor prime or spin-coat before photoresist coating, HMDS reacts with surface OH groups to form a hydrophobic trimethylsilyl (TMS) monolayer, dramatically improving photoresist adhesion on oxide and nitride surfaces and preventing pattern delamination during development.

semiconductor etching chemicals

Hydrochloric Acid Semiconductor Grade (HCl 37%)

CAS: 7647-01-0

Semiconductor grade hydrochloric acid (37%) is a critical chemical in RCA SC-2 cleaning for metal ion removal and oxide stripping. It forms complexes with heavy metals and removes them from wafer surfaces, and is used in HCl/H2O2/H2O (SC-2) mixtures to eliminate alkali metals and heavy metal contamination before oxidation furnace steps.

semiconductor etching chemicals

Hydrofluoric Acid Semiconductor Grade (HF 49%)

CAS: 7664-39-3

Semiconductor grade hydrofluoric acid (49% HF) is an ultra-pure aqueous solution used for silicon oxide etching, native oxide removal, and wafer surface cleaning. It meets SEMI C1 or SEMI C8 purity specifications with metallic impurities at sub-ppb levels. Critical for front-end-of-line (FEOL) wet etch processes in IC fabrication.

semiconductor etching chemicals

Hydrogen Peroxide Semiconductor Grade (H2O2 30%)

CAS: 7722-84-1

Semiconductor grade hydrogen peroxide (30%) is an essential oxidizing agent used in RCA SC-1 and SC-2 wafer cleaning processes to remove organic and ionic contamination. When mixed with ammonium hydroxide (SC-1) it removes particles and organics; with HCl (SC-2) it dissolves metal ions. It is also a key component of SPM piranha cleaning.