Silicon CVD Precursor
CAS Number: 992-94-9
Silicon CVD precursor is a volatile silicon-containing compound such as silane (SiH₄), TEOS, or DCS used in chemical vapor deposition to grow silicon, silicon dioxide, silicon nitride, and polysilicon films on semiconductor wafers. These films serve as gate electrodes, dielectrics, passivation layers, and structural elements in MEMS. High purity is mandatory to avoid device performance degradation from trace metallic contaminants.
Technical Specifications
| purity | >99.999% (5N, SiH₄) |
| appearance | Colorless gas (SiH₄) or liquid (TEOS) |
| depositRate | 100–1000 Å/min (process dependent) |
| filmUniformity | <1% 1σ across 300 mm wafer |
| metalImpurities | <1 ppb each |
| moistureContent | <1 ppm |
Applications
- Polysilicon gate and thin film deposition
- TEOS-based SiO₂ ILD deposition
- Si₃N₄ etch stop and passivation layer
- Epitaxial silicon deposition
- MEMS structural layer growth
Key Features
- 5N purity ensures minimal metallic contamination
- Wide range of silicon compound options (SiH₄, TEOS, DCS, BTBAS)
- Compatible with LPCVD, PECVD, and ALD reactors
- Stable supply with certified analysis documentation