RCA SC-1 Clean Reagent (NH4OH/H2O2/H2O)
RCA SC-1 (Standard Clean 1, APM: Ammonia-Peroxide Mixture) is a ready-to-use or component-supplied cleaning system using NH4OH:H2O2:H2O (1:1:5 to 1:2:10 v/v) at 65–80°C to remove particles and light organic contamination from silicon wafer surfaces. The mild oxide etch component lifts particles while H2O2 oxidizes organic matter, achieving sub-0.1 count/cm2 particle levels after clean.
Technical Specifications
| appearance | Colorless clear liquid (each component) |
| purity (%) | ≥99.9 (each component) |
| use temperature | 65–80°C |
| metallic impurities | ≤1 ppb each (per component) |
| NH4OH:H2O2:H2O ratio | 1:1:5 (standard, adjustable) |
Applications
- Pre-gate oxide particle and organic removal
- Pre-diffusion furnace standard clean step
- FEOL wafer cleaning in RCA sequence
- Post-CMP particle removal clean
- Pre-metal deposition surface preparation
Key Features
- Proven RCA process with decades of industry qualification data
- Effective particle removal via zeta-potential repulsion mechanism
- Components available individually or as premixed kits
- Compatible with 200mm and 300mm batch and single-wafer clean tools
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