Titanium Tetrachloride CVD/ALD Precursor (TiCl4)
CAS Number: 7550-45-0
Titanium tetrachloride (TiCl4) is the primary precursor for CVD and ALD deposition of titanium-containing thin films including TiN diffusion barriers, TiO2 high-k dielectrics, and TiSi2 contact silicide. TiCl4-based ALD with NH3 or N2/H2 plasma produces conformal TiN barrier layers in 3D NAND and DRAM capacitor structures. Its high vapor pressure and thermal stability make it ideal for high-throughput semiconductor manufacturing.
Technical Specifications
| appearance | Colorless to pale yellow fuming liquid |
| purity (%) | ≥99.999 (5N semiconductor grade) |
| boiling point | 136°C |
| water content | ≤5 ppm |
| metallic impurities (V, Fe, Al) | ≤0.5 ppm each |
Applications
- TiN ALD diffusion barrier for Cu damascene
- TiN gate electrode in high-k/metal gate CMOS
- TiO2 high-k dielectric for DRAM capacitors
- TiSi2 self-aligned silicide (salicide) formation
- 3D NAND wordline TiN deposition
Key Features
- 5N purity produces TiN films with excellent barrier properties against Cu diffusion
- High vapor pressure enables room-temperature vapor delivery
- Conformal step coverage in high-aspect-ratio 3D structures
- Cylinder and ampoule delivery systems available for fab tool compatibility
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CAS Number
7550-45-0
Category
Semiconductor Etching ChemicalsAvailability
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