Ammonia Semiconductor Grade (NH3 Nitride CVD)
CAS Number: 7664-41-7
Semiconductor grade ammonia (NH3) is the nitrogen source for CVD and ALD deposition of silicon nitride (Si3N4), titanium nitride (TiN), aluminum nitride (AlN), and gallium nitride (GaN) thin films. In LPCVD and PECVD processes with DCS or silane, NH3 produces conformal nitride films essential for etch stops, diffusion barriers, and passivation layers throughout IC fabrication.
Technical Specifications
| oxygen | ≤0.1 ppm |
| moisture | ≤0.1 ppm |
| appearance | Colorless gas with characteristic odor |
| purity (%) | ≥99.9999 (6N semiconductor grade) |
| metallic impurities | ≤0.01 ppb each |
Applications
- LPCVD/PECVD Si3N4 deposition with DCS or SiH4
- TiN ALD nitrogen source with TiCl4
- GaN and AlN epitaxial growth (MOCVD)
- Nitridation of silicon oxide for oxynitride gate
- Post-metallization anneal (PMA) forming gas alternative
Key Features
- 6N ultra-high purity for defect-free nitride film deposition
- Ultra-low moisture prevents unwanted oxide incorporation in nitride films
- Compatible with batch LPCVD furnaces and single-wafer PECVD chambers
- Available in bulk liquid supply and high-pressure cylinders for fab requirements
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CAS Number
7664-41-7
Category
Semiconductor Etching ChemicalsAvailability
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