Tetraethyl Orthosilicate (TEOS) CVD Precursor
CAS Number: 78-10-4
Tetraethyl orthosilicate (TEOS, Si(OC2H5)4) is the dominant precursor for CVD silicon dioxide deposition in semiconductor manufacturing. TEOS-based PECVD and SACVD processes deposit high-quality SiO2 films with excellent step coverage and conformality at temperatures of 300–750°C. TEOS oxide is used as ILD, STI liner, spacer, and hard mask in CMOS front-end and back-end processes.
Technical Specifications
| appearance | Colorless clear liquid |
| purity (%) | ≥99.999 (5N, semiconductor grade) |
| boiling point | 168°C |
| water content | ≤10 ppm |
| metallic impurities | ≤0.1 ppb each |
Applications
- PECVD SiO2 ILD deposition for BEOL
- Sub-atmospheric CVD (SACVD) TEOS gap-fill
- STI trench liner and fill oxide
- Spacer and sidewall oxide in CMOS gate process
- Hard mask deposition for etch patterning
Key Features
- 5N purity enables high-reliability gate and tunnel oxide applications
- Stable liquid precursor with low vapor pressure for precise flow control
- Produces dense, low-defect SiO2 with excellent electrical properties
- Compatible with O3, O2, and N2O oxidant chemistries for diverse CVD processes
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CAS Number
78-10-4
Category
Semiconductor Etching ChemicalsAvailability
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